Ion-Induced Beryllium Oxidation

R. Kh. Zalavutdinov, V. Kh. Alimov, A. E. Gorodetsky, and A. P. Zakharov

Frumkin Institute of Physical Chemistry and Electrochemistry, Russian Academy of Sciences,
Leninskii pr. 31, Moscow, 119991 Russia

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Received March 3, 2007

Abstract — Ion-induced beryllium oxidation under the irradiation with deuterium ions with an energy of 3 keV at 300 and 700 K is studied by secondary ion mass spectrometry, electrone probe microanalysis, and reflected high-energy electron diffraction. It is shown that the irradiation in vacuum, with subsequent exposure to air (5days, 300 K) or oxygen (30 min, 1 10^-1 Pa) at the irradiation temperature, resulted in an increase in the oxygen content in beryllium. When beryllium is irradiated in oxygen atmosphere (1 10^-5-1 10^-3 Pa), the early stages of the accelerated formation of oxide film is associated with the effect of the ion compartment chamber incorporation of oxygen prechemisorbed at the metal outer surface. After long-term irradiation, the elevated oxygen content in the metal and the formation of relatively bulky beryllium oxide film is due to the development of open porosity.